Resonant-cavity InGaN quantum-well blue light-emitting diodes
Identifieur interne : 011C35 ( Main/Repository ); précédent : 011C34; suivant : 011C36Resonant-cavity InGaN quantum-well blue light-emitting diodes
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Abstract
We describe progress in blue resonant-cavity light-emitting diodes, based on InGaN/GaN quantum-well heterostructures. We have fabricated vertical-microcavity devices in which either one or both mirrors forming the cavity are patterned, high-reflectivity dielectrics Bragg reflectors. The results suggest that a blue vertical-cavity diode laser may be feasible by this approach. © 2000 American Institute of Physics.
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<record><TEI><teiHeader><fileDesc><titleStmt><title xml:lang="en" level="a">Resonant-cavity InGaN quantum-well blue light-emitting diodes</title><author><name sortKey="Song, Y K" uniqKey="Song Y">Y.-K. Song</name><affiliation wicri:level="2"><inist:fA14 i1="01"><s1>Division of Engineering, Brown University, Providence, Rhode Island 02912</s1><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ></inist:fA14><country xml:lang="fr">États-Unis</country><placeName><region type="state">Rhode Island</region></placeName><wicri:cityArea>Division of Engineering, Brown University, Providence</wicri:cityArea></affiliation></author><author><name sortKey="Diagne, M" uniqKey="Diagne M">M. Diagne</name><affiliation wicri:level="2"><inist:fA14 i1="01"><s1>Division of Engineering, Brown University, Providence, Rhode Island 02912</s1><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ></inist:fA14><country xml:lang="fr">États-Unis</country><placeName><region type="state">Rhode Island</region></placeName><wicri:cityArea>Division of Engineering, Brown University, Providence</wicri:cityArea></affiliation></author><author><name sortKey="Zhou, H" uniqKey="Zhou H">H. Zhou</name><affiliation wicri:level="2"><inist:fA14 i1="01"><s1>Division of Engineering, Brown University, Providence, Rhode Island 02912</s1><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ></inist:fA14><country xml:lang="fr">États-Unis</country><placeName><region type="state">Rhode Island</region></placeName><wicri:cityArea>Division of Engineering, Brown University, Providence</wicri:cityArea></affiliation></author><author><name sortKey="Nurmikko, A V" uniqKey="Nurmikko A">A. V. Nurmikko</name><affiliation wicri:level="2"><inist:fA14 i1="01"><s1>Division of Engineering, Brown University, Providence, Rhode Island 02912</s1><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ></inist:fA14><country xml:lang="fr">États-Unis</country><placeName><region type="state">Rhode Island</region></placeName><wicri:cityArea>Division of Engineering, Brown University, Providence</wicri:cityArea></affiliation></author><author><name sortKey="Schneider, R P" uniqKey="Schneider R">R. P. Schneider</name><affiliation wicri:level="2"><inist:fA14 i1="02"><s1>Agilent Laboratories, Palo Alto, California 94303</s1><sZ>5 aut.</sZ><sZ>6 aut.</sZ></inist:fA14><country xml:lang="fr">États-Unis</country><placeName><region type="state">Californie</region></placeName><wicri:cityArea>Agilent Laboratories, Palo Alto</wicri:cityArea></affiliation></author><author><name sortKey="Takeuchi, T" uniqKey="Takeuchi T">T. Takeuchi</name><affiliation wicri:level="2"><inist:fA14 i1="02"><s1>Agilent Laboratories, Palo Alto, California 94303</s1><sZ>5 aut.</sZ><sZ>6 aut.</sZ></inist:fA14><country xml:lang="fr">États-Unis</country><placeName><region type="state">Californie</region></placeName><wicri:cityArea>Agilent Laboratories, Palo Alto</wicri:cityArea></affiliation></author></titleStmt><publicationStmt><idno type="inist">00-0389566</idno><date when="2000-09-18">2000-09-18</date><idno type="stanalyst">PASCAL 00-0389566 AIP</idno><idno type="RBID">Pascal:00-0389566</idno><idno type="wicri:Area/Main/Corpus">012821</idno><idno type="wicri:Area/Main/Repository">011C35</idno></publicationStmt><seriesStmt><idno type="ISSN">0003-6951</idno><title level="j" type="abbreviated">Appl. phys. lett.</title><title level="j" type="main">Applied physics letters</title></seriesStmt></fileDesc><profileDesc><textClass><keywords scheme="KwdEn" xml:lang="en"><term>Distributed Bragg reflector lasers</term><term>Experimental study</term><term>Gallium compounds</term><term>III-V semiconductors</term><term>Indium compounds</term><term>Light emitting diodes</term><term>Quantum well lasers</term><term>Semiconductor quantum wells</term><term>Surface emitting lasers</term><term>microcavity lasers</term></keywords><keywords scheme="Pascal" xml:lang="fr"><term>8560J</term><term>4255S</term><term>4255P</term><term>4260D</term><term>8530V</term><term>Etude expérimentale</term><term>Indium composé</term><term>Gallium composé</term><term>Semiconducteur III-V</term><term>Diode électroluminescente</term><term>Laser réflexion Bragg répartie</term><term>Laser émission surface</term><term>Puits quantique semiconducteur</term><term>Laser puits quantique</term></keywords></textClass></profileDesc></teiHeader><front><div type="abstract" xml:lang="en">We describe progress in blue resonant-cavity light-emitting diodes, based on InGaN/GaN quantum-well heterostructures. We have fabricated vertical-microcavity devices in which either one or both mirrors forming the cavity are patterned, high-reflectivity dielectrics Bragg reflectors. The results suggest that a blue vertical-cavity diode laser may be feasible by this approach. © 2000 American Institute of Physics.</div></front></TEI><inist><standard h6="B"><pA><fA01 i1="01" i2="1"><s0>0003-6951</s0></fA01><fA02 i1="01"><s0>APPLAB</s0></fA02><fA03 i2="1"><s0>Appl. phys. lett.</s0></fA03><fA05><s2>77</s2></fA05><fA06><s2>12</s2></fA06><fA08 i1="01" i2="1" l="ENG"><s1>Resonant-cavity InGaN quantum-well blue light-emitting diodes</s1></fA08><fA11 i1="01" i2="1"><s1>SONG (Y.-K.)</s1></fA11><fA11 i1="02" i2="1"><s1>DIAGNE (M.)</s1></fA11><fA11 i1="03" i2="1"><s1>ZHOU (H.)</s1></fA11><fA11 i1="04" i2="1"><s1>NURMIKKO (A. V.)</s1></fA11><fA11 i1="05" i2="1"><s1>SCHNEIDER (R. P.)</s1></fA11><fA11 i1="06" i2="1"><s1>TAKEUCHI (T.)</s1></fA11><fA14 i1="01"><s1>Division of Engineering, Brown University, Providence, Rhode Island 02912</s1><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ></fA14><fA14 i1="02"><s1>Agilent Laboratories, Palo Alto, California 94303</s1><sZ>5 aut.</sZ><sZ>6 aut.</sZ></fA14><fA20><s1>1744-1746</s1></fA20><fA21><s1>2000-09-18</s1></fA21><fA23 i1="01"><s0>ENG</s0></fA23><fA43 i1="01"><s1>INIST</s1><s2>10020</s2></fA43><fA44><s0>8100</s0><s1>© 2000 American Institute of Physics. All rights reserved.</s1></fA44><fA47 i1="01" i2="1"><s0>00-0389566</s0></fA47><fA60><s1>P</s1></fA60><fA61><s0>A</s0></fA61><fA64 i1="01" i2="1"><s0>Applied physics letters</s0></fA64><fA66 i1="01"><s0>USA</s0></fA66><fC01 i1="01" l="ENG"><s0>We describe progress in blue resonant-cavity light-emitting diodes, based on InGaN/GaN quantum-well heterostructures. 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